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Updated: Jun 8, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
A study on low temperature transport properties of independent double-gated poly-Si nanowire transistors
Wei-Chen Chen1, Horng-Chih Lin, Zer-Ming Lin
1Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
Abstract:
Employing mix-and-match lithography of I-line stepper and e-beam direct writing, independent double-gated poly-Si nanowire thin film transistors with channel lengths ranging from 70 nm to 5 µm were fabricated and characterized. Electrical measurements performed under cryogenic ambient displayed intriguing characteristics in terms of length dependent abrupt switching behavior for one of the single-gated modes. Through simulation and experimental verification, the root cause for this phenomenon was identified to be the non-uniformly distributed dopants introduced by ion implantation.
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