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Continuous-wave subwavelength microdisk lasers at λ = 1.53 µm.

Zhijun Liu1, Jeffrey M Shainline, Gustavo E Fernandes

  • 1Division of Engineering, Brown University, 182 Hope Street, Providence, Rohde Island 02906, USA. zhijun_liu@brown.edu

Optics Express
|October 14, 2010
PubMed
Summary

Subwavelength InGaAs/AlInAs microdisk lasers were demonstrated at 45 K. These lasers operate in single-mode at 1.53 µm, showing potential for integrated photonics.

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Area of Science:

  • Optoelectronics
  • Semiconductor Lasers
  • Nanophotonics

Background:

  • Microdisk lasers offer miniaturization potential for photonic integrated circuits.
  • Indium Gallium Arsenide / Aluminum Indium Arsenide (InGaAs/AlInAs) heterostructures are key for optoelectronic devices.

Purpose of the Study:

  • To demonstrate subwavelength InGaAs/AlInAs microdisk lasers.
  • To characterize their lasing performance under optical pumping.

Main Methods:

  • Fabrication of subwavelength InGaAs/AlInAs microdisks.
  • Continuous-wave optical pumping at a heat-sink temperature of 45 K.
  • Mode analysis using simulation.

Main Results:

  • Demonstrated lasing of a 1.49 µm diameter, 209 nm thick microdisk.

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  • Achieved single-mode lasing at 1.53 µm.
  • Identified the lasing mode as a whispering-gallery mode with specific radial and azimuthal numbers and a modal volume of 2.12(λ/n)(3).
  • Conclusions:

    • Subwavelength InGaAs/AlInAs microdisk lasers are feasible.
    • The demonstrated device operates in a single-mode whispering-gallery mode.
    • These results are promising for developing compact laser sources.