Experimental evaluation of a new expression for the far field of a diode laser beam

The validity of a newly derived expression for the far field of a diode laser beam is examined by comparison of the measured intensity profiles with the calculated ones for typical double-heterostructure diodes. I also clarify which of the new and conventional expressions for the intensity profiles in the plane normal to the junction is more useful. The cause of the observed discrepancy between the measured and calculated profiles in the plane parallel to the junction is investigated by consideration of the higher-order Hermite-Gaussian modes. Further, I examine how the axial intensity varies with the propagation distance.