Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

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Updated: Jun 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Shimeng Yu1, Jiale Liang, Yi Wu

  • 1Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. simonyu@stanford.edu

Nanotechnology
|October 26, 2010
PubMed

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