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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Modeling of hydrogen and hydroxyl group migration on graphene

D W Boukhvalov1

  • 1Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. D.Bukhvalov@science.ru.nl

Physical Chemistry Chemical Physics : PCCP
|October 27, 2010
PubMed

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