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Updated: Jun 7, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing

Yi-Yang Liu1, Cheng-Li Song, Wei-Jing Zeng

  • 1State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.

Journal of the American Chemical Society
|October 29, 2010
PubMed

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