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Updated: Jun 7, 2026

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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Measuring and modeling the proximity effect in direct-write electron-beam lithography kinoforms.
Applied Optics
|November 2, 2010
Summary
The proximity effect in electron-beam lithography gratings was measured. Development time significantly impacts the writing component of the point-spread function, while the background component is less affected.
Area of Science:
- Materials Science
- Nanotechnology
- Physics
Background:
- Direct-write electron-beam lithography (EBL) is crucial for fabricating nanostructures.
- Understanding proximity effects is essential for precise pattern replication in EBL.
- Successively developed gratings present a unique system to study these effects.
Purpose of the Study:
- To quantify the proximity effect in direct-write EBL gratings.
- To determine the parameters of the point-spread function governing the proximity effect.
- To analyze the influence of development time on different components of the point-spread function.
Main Methods:
- Measurement of diffraction orders from EBL-fabricated gratings.
- Analysis of grating relief shapes derived from diffraction power.
- Modeling the proximity effect using a double Gaussian point-spread function.
Main Results:
- Grating relief shapes were successfully determined from diffraction measurements.
- The point-spread function parameters were accurately extracted.
- A significant increase in the writing component of the point-spread function was observed with longer development times.
Conclusions:
- Development time is a critical factor influencing the proximity effect in EBL.
- The writing and background components of the point-spread function exhibit different sensitivities to development time.
- This study provides quantitative insights into proximity effect mitigation strategies in EBL.
