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Updated: Jun 7, 2026

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
Published on: June 19, 2018
Atomic structure display of a real silicon surface under light scattering
Abstract:
Angular dependencies of the scattered light intensity were measured on Si wafers that have different crystallographic orientations by using a He-Ne laser (λ = 632.8 nm, 80 µm spot diameter). During the experiment the Si wafer was fixed relative to the incident beam. Regular patterns were found in the azimuthal-angle-resolved scattering curves. Such patterns seem to be caused by the faceted shallow atomic structures of the surface.
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