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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Monolithic nonlinear pulse compressor on a silicon chip.

Dawn T H Tan1, Pang C Sun, Yeshaiahu Fainman

  • 1Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr, La Jolla, California 92093, USA.

Nature Communications
|November 18, 2010
PubMed
Summary
This summary is machine-generated.

Researchers developed a compact silicon nanophotonic pulse compressor. This device achieves high compression factors for ultrashort pulses, enabling integration with future optical networks.

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Area of Science:

  • Photonics and Optical Engineering
  • Semiconductor Devices
  • Nonlinear Optics

Background:

  • Increasing demand for information bandwidth drives a shift towards optical interconnects.
  • Optical switches, modulators, and wavelength converters are key components for optical signal processing.
  • Pulse compression is vital for generating ultrashort pulses used in communications, imaging, and spectroscopy.

Purpose of the Study:

  • To demonstrate the first chip-scale nanophotonic pulse compressor on a silicon platform.
  • To achieve significant pulse compression using nonlinear spectral broadening and integrated dispersion.
  • To enable the integration of ultrashort pulse sources with photonic circuits for optoelectronic networks.

Main Methods:

  • Utilizing nonlinear spectral broadening via self-phase modulation in a silicon nanowire waveguide.
  • Implementing temporal compression using an integrated dispersive element.
  • Operating the device with low input peak power (10 W) for 7 picosecond (ps) pulses.

Main Results:

  • Achieved pulse compression factors up to 7 for 7 ps input pulses.
  • Demonstrated a chip-scale, integrated nanophotonic pulse compressor.
  • Operated the device efficiently at low input peak power.

Conclusions:

  • The developed silicon nanophotonic pulse compressor is compact and efficient.
  • This technology facilitates the integration of ultrashort pulse generation with existing photonic circuits.
  • The device is crucial for advancing high-capacity communications, imaging, and spectroscopy applications.