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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
High mobility field effect transistor from solution-processed needle-like tellurium nanowires.
Hong Tao1, Hongmei Liu, Donghuan Qin
1Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Special Functional Materials, South China University of Technology, Guangzhou 510640, China.
Journal of Nanoscience and Nanotechnology
|December 3, 2010
Summary
Environmentally friendly synthesis produced uniform tellurium nanowires (NWs). Optimized field-effect transistors (FETs) from these tellurium NWs achieved a record high carrier mobility of 299 cm2V(-1)s(-1).
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Tellurium nanowires (NWs) are promising nanomaterials for electronic applications.
- Controlling the morphology and quality of tellurium NWs is crucial for device performance.
Purpose of the Study:
- To develop an efficient and environmentally friendly method for synthesizing uniform tellurium nanowires.
- To fabricate and characterize high-performance field-effect transistors (FETs) based on single tellurium NWs.
Main Methods:
- Hydrothermal synthesis using beta-cyclodextrin ligands to control morphology.
- Photolithographic patterning for fabricating single NW FET devices.
- Optimization of electrode and surface treatments for enhanced device performance.
Main Results:
- Achieved high yield synthesis of well-dispersed, uniform needle-like tellurium NWs.
- Fabricated single tellurium NW FETs with a record high carrier mobility of 299 cm2V(-1)s(-1).
- Identified key factors influencing FET performance, including NW purity, crystallinity, surface species, and metal contacts.
Conclusions:
- The hydrothermal method with beta-cyclodextrin provides an effective route to uniform tellurium NWs.
- Optimized tellurium NW FETs demonstrate superior electronic properties, paving the way for advanced nanoelectronic devices.
- Understanding the influence of material characteristics and device fabrication is essential for realizing the full potential of tellurium NWs.
