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Laser-synthesized epitaxial graphene.

Sangwon Lee¹, Michael F Toney, Wonhee Ko

¹Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.

|December 3, 2010

Summary

A novel laser-based method enables scalable, low-temperature synthesis of epitaxial graphene (EG) on silicon carbide. This technique offers precise control over graphene thickness, paving the way for advanced electronic devices.

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Area of Science:

Condensed matter physics
Materials science
Microelectronics

Background:

Graphene exhibits unique electronic properties, driving significant interest in condensed matter physics and microelectronics.
Current methods for synthesizing epitaxial graphene (EG) on silicon carbide (SiC) face challenges in scalability and industrial application.

Purpose of the Study:

To develop a high-throughput, scalable, and low-temperature method for synthesizing epitaxial graphene (EG).
To investigate the feasibility of using laser-induced surface decomposition of SiC for graphene production.

Main Methods:

Utilized excimer laser irradiation on the Si-rich face of a SiC single-crystal.
Employed reflection high-energy electron diffraction (RHEED), Raman spectroscopy, synchrotron-based X-ray diffraction, transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) for characterization.

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Main Results:

Successfully synthesized EG on SiC using a laser-induced surface decomposition technique.
Demonstrated that laser fluence precisely controls graphene thickness, down to a single monolayer.
Observed that laser-synthesized graphene lacks typical features like Bernal stacking and SiC surface reconstruction seen in conventionally grown EG.

Conclusions:

The developed laser-based technique offers a scalable and controlled approach for epitaxial graphene synthesis.
This method provides an alternative route to conventional thermal decomposition, potentially enabling new applications in microelectronics.