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Layer-by-layer structured polymer/TiO2 thin film and its gate dielectric application.
Bong Jun Park1, Jae Hoon Park, Jong Sun Choi
1Department of Polymer Science and Engineering, Inha University, Incheon 402-751, Korea.
Journal of Nanoscience and Nanotechnology
|December 7, 2010
Summary
This study developed novel poly(methyl methacrylate-co-methacrylic acid)/titanium dioxide (PMMA-co-MAA/TiO2) composite films for organic thin-film transistor (OTFT) gate dielectrics. The composite films exhibit enhanced dielectric properties, improving OTFT performance.
Area of Science:
- Materials Science
- Polymer Science
- Nanotechnology
Background:
- Composite materials combine polymer flexibility with inorganic dielectric properties.
- Organic thin-film transistors (OTFTs) require efficient gate dielectric layers.
Purpose of the Study:
- To fabricate and characterize poly(methyl methacrylate-co-methacrylic acid)/titanium dioxide (PMMA-co-MAA/TiO2) bilayer films.
- To evaluate their suitability as gate dielectrics in OTFTs.
Main Methods:
- Spin coating and self-assembled sol-gel process for film fabrication.
- Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) for morphology analysis.
- Electrical characterization of OTFT devices with pentacene conducting layer.
Main Results:
- The PMMA-co-MAA/TiO2 composite films showed improved dielectric constants compared to pure polymer films.
- OTFTs utilizing the composite dielectric layer exhibited a reduced threshold gate voltage.
- An increased field-induced current was observed in devices with the composite dielectric.
Conclusions:
- The PMMA-co-MAA/TiO2 composite is a promising material for gate dielectric applications in OTFTs.
- The synergistic integration of polymer and inorganic components enhances device performance.
