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Multiferroic BiFeO3 thin films for multifunctional devices.

Manish K Singh1, Yi Yang, Christos G Takoudis

  • 1Department of Chemical Engineering, University of Illinois at Chicago, Chicago 60607, USA.

Journal of Nanoscience and Nanotechnology
|December 8, 2010
PubMed
Summary
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We successfully deposited crystalline bismuth ferrite (BiFeO3) films using metalorganic chemical vapor deposition. The resulting films exhibit stoichiometric composition, stable polarizable domains, and room-temperature magnetization.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Thin Film Deposition

Background:

  • Bismuth ferrite (BiFeO3) is a multiferroic material with potential applications in various electronic devices.
  • Developing efficient deposition methods for high-quality BiFeO3 films is crucial for device fabrication.

Purpose of the Study:

  • To report the metalorganic chemical vapor deposition (MOCVD) of crystalline BiFeO3 films.
  • To investigate the suitability of n-butylferrocene and triphenylbismuth as precursors.
  • To characterize the structural, morphological, compositional, and electrical properties of the deposited films.

Main Methods:

  • Metalorganic chemical vapor deposition (MOCVD) was employed.
  • Thermogravimetric analysis (TGA) was used to assess precursor suitability.

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  • X-ray diffraction (XRD) and scanning electron microscopy (SEM) characterized structure and morphology.
  • X-ray photoelectron spectroscopy (XPS) analyzed film composition.
  • Electrostatic force microscopy (EFM) evaluated domain polarization.

    • Main Results:

    • Crystalline BiFeO3 films were successfully deposited on platinized silicon substrates.
    • Thermogravimetric analysis supported the use of n-butylferrocene and triphenylbismuth.
    • XRD and SEM confirmed the crystalline structure and film morphology.
    • XPS analysis verified stoichiometric BiFeO3 composition.
    • EFM demonstrated stable, polarizable domains with no deterioration over time.
    • A saturation magnetization of 10 +/- 1 emu/cm3 was observed at room temperature.

    Conclusions:

    • Metalorganic chemical vapor deposition is a viable method for producing stoichiometric BiFeO3 films.
    • The chosen precursors are suitable for BiFeO3 deposition.
    • The deposited BiFeO3 films possess desirable properties for potential applications, including stable ferroelectricity and room-temperature magnetism.