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Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation
Published on: February 25, 2017
A GaN photonic crystal membrane laser.
Cheng-Hung Lin1, Jyh-Yang Wang, Cheng-Yen Chen
1Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, Republic of China.
Nanotechnology
|December 8, 2010
Summary
Optically pumped Gallium Nitride (GaN) photonic crystal lasers demonstrate room-temperature operation. These GaN lasers exhibit superior lasing characteristics, including low thresholds and high Q factors, due to their unique structure.
Area of Science:
- Materials Science
- Optoelectronics
- Photonics
Background:
- Photonic crystal (PhC) lasers offer unique light manipulation properties.
- Gallium Nitride (GaN) is a key material for optoelectronic devices.
- Room-temperature operation is crucial for practical laser applications.
Purpose of the Study:
- To demonstrate optically pumped GaN photonic crystal membrane lasers at room temperature.
- To compare the lasing characteristics of defect structures with perfect PhC.
- To investigate the influence of PhC structure on lasing properties.
Main Methods:
- Fabrication of GaN photonic crystals with scalene-triangular hole arrangements.
- Optical pumping of PhC membrane lasers.
- Characterization of lasing modes, thresholds, spectral widths, Q factors, and polarization.
Main Results:
- Room-temperature lasing was achieved in GaN PhC membrane lasers.
- Defect modes exhibited lasing wavelengths near perfect PhC band-edge modes.
- Lasing modes showed distinct thresholds, spectral widths, Q factors, and polarization ratios.
- Polarization distributions were oriented along PhC structure axes.
- One defect mode achieved a low threshold (0.82 mJ cm⁻²), high Q factor (1743), and high polarization ratio (25.4).
Conclusions:
- The similar lasing characteristics between band-edge and defect modes are attributed to narrow partial band gaps.
- The scalene-triangle PhC structure dictates the oriented polarization properties.
- The demonstrated GaN PhC lasers exhibit superior performance compared to previous reports.
