Electron beam annealing of Fe+ implanted Si nanostructures

Silicon nanostructures (nanowhiskers) have been formed at surface densities approximately 10(9) cm-2 by electron beam annealing (EBA) prior to the implantation of 7 keV Fe+ ions to fluences from 1 x 10(13) - 4 x 10(15) Fe+ cm(-2). A second EBA step is then applied to relieve implantation-induced stresses. RBS analysis shows that the implanted Fe remains close to the surface. AFM characterisations of the implanted nanowhiskers before and after the final EBA step are summarised in graphs of height versus surface density. In a striking result it is shown that the nanowhiskers not only survive processing but also grow significantly. For example, at the highest fluence of 4 x 10(15) Fe+ cm(-2), the average height more than doubles: the increases are from 5.0 nm to 6.5 nm under implantation and from 6.5 nm to 11.8 nm under EBA. In addition there is a significant increase in surface density from an initial value of 1.6 x 10(9) cm(-2) to 4.3 x 10(9) cm(-2). These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission.