Related Experiment Video
Updated: Jun 6, 2026
08:12
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Electron beam annealing of Fe+ implanted Si nanostructures
1National Isotope Centre, GNS Science, Lower Hutt 5010, New Zealand.
Journal of Nanoscience and Nanotechnology
|December 9, 2010
Summary
Silicon nanowhiskers were doped with iron ions using electron beam annealing and ion implantation. Remarkably, the nanowhiskers grew significantly, demonstrating potential for spin-based silicon devices.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Silicon nanostructures, specifically nanowhiskers, are crucial for advanced electronic applications.
- Doping silicon with magnetic ions is key for developing novel spintronic devices.
Purpose of the Study:
- To investigate the effect of iron ion implantation and electron beam annealing on silicon nanowhiskers.
- To assess the feasibility of fabricating silicon-based devices for spin-dependent field emission.
Main Methods:
- Formation of silicon nanowhiskers via electron beam annealing (EBA).
- Implantation of 7 keV Fe+ ions at fluences from 1x10^13 to 4x10^15 cm-2.
- Post-implantation stress relief using a second EBA step.
- Analysis using Rutherford Backscattering Spectrometry (RBS) and Atomic Force Microscopy (AFM).
Main Results:
- Silicon nanowhiskers survived the ion implantation and annealing processes.
- Significant growth in nanowhisker height was observed, more than doubling at the highest fluence (4x10^15 Fe+ cm-2).
- Surface density of nanowhiskers increased from 1.6x10^9 cm-2 to 4.3x10^9 cm-2.
- Implanted iron remained localized near the silicon surface.
Conclusions:
- Electron beam annealing and iron ion implantation are viable methods for doping silicon nanostructures.
- The process leads to enhanced nanowhisker growth and increased surface density.
- This work demonstrates the potential for creating silicon devices for spin-dependent enhanced field emission.
