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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
A novel fabrication method for titania resistive switching device.
1School of Computer National University of Defense Technology, Changsha 410073, China.
Journal of Nanoscience and Nanotechnology
|December 9, 2010
Summary
Researchers developed a novel, low-cost method for fabricating vertical titania resistive switching devices. These devices show promising nonvolatile memory applications due to their stable resistive bistability and high resistance ratio.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Titania (TiO2) exhibits reversible resistive switching, making it attractive for nonvolatile random-access memory (NVRAM) applications.
- Existing fabrication methods for resistive switching devices can be complex and costly.
- Vertical device structures offer potential advantages in terms of device density and performance.
Purpose of the Study:
- To propose and demonstrate a novel, low-cost, and high-yielding fabrication method for vertical titania resistive switching devices.
- To characterize the resistive switching properties of the fabricated devices.
- To assess the potential of this method for mass production of NVRAM.
Main Methods:
- Fabrication of a vertical device structure using photolithography, chemical etching, electron beam evaporation (EBE) for titania deposition, and ion sputtering for platinum electrode formation.
- Utilized a mild chemical process for trench etching to preserve the titania layer integrity.
- Employed a lift-off process with acetone for defining the top platinum electrodes.
- Characterized resistive switching behavior, including on/off threshold voltages and resistance ratios.
Main Results:
- Successfully fabricated vertical titania resistive switching devices exhibiting stable resistive bistability.
- Observed an on-threshold voltage of +1.5 V and an off-threshold voltage of -0.6 V.
- Achieved a high resistance ratio of approximately 1 x 10^3 between the high and low resistance states.
- Demonstrated nonvolatile characteristics with retention tested over an hour.
Conclusions:
- The proposed fabrication method is cost-effective, high-yielding, and easily implementable for producing vertical titania resistive switching devices.
- The observed resistive switching behavior is attributed to the formation and rupture of conductive channels, linked to oxygen vacancy defects.
- This method holds significant potential for the fabrication of advanced nonvolatile memory technologies.
