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Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory

Yu Chao Yang1, Bo Fan, Fei Zeng

  • 1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.

Journal of Nanoscience and Nanotechnology
|December 9, 2010
PubMed

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