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Published on: May 13, 2020
Electrical bistabilities and memory mechanisms of organic bistable devices fabricated utilizing SnO2 nanoparticles
Jin Ku Kwak1, Dong Yeol Yun, Dong Ick Son
1Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Republic of Korea.
Abstract:
Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) (PMMA) polymer layer were formed by using a spin coating method. Transmission electon microscopy images and photoluminescence spectra showed that synethized SnO2 nanoparticles were randomly distributed in the dibutyl ehter solution. Current-voltage (I-V) measurements on the Al/SnO2 nanoparticles embedded in PMMA layer/ITO devices at 300 K showed current bistability due to the existence of SnO2 nanoparticles. Current-time (I-t) results showed the memory retention characteristic of the device. Carrier transport mechanisms of the device are described on the basis of the I-V experimental results and electronic structures.
