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Enhanced performance of printed organic diodes using a thin interfacial barrier layer
ACS Applied Materials & Interfaces
|December 15, 2010
Summary
Researchers developed printed organic diodes using a thin interfacial layer to create a Schottky barrier. This significantly reduces reverse current, enabling high rectification ratios for specialized electronic applications.
Area of Science:
- Organic electronics
- Semiconductor device physics
Background:
- Fabrication of printed organic diodes.
- Characterization of organic interfacial layers.
- Schottky barrier formation in organic devices.
Discussion:
- The role of a thin organic interfacial layer (<10 nm) in forming a Schottky barrier.
- Impact of the interfacial layer on diode performance, specifically reverse current reduction.
- Analysis of forward characteristics above 1 V.
Key Insights:
- A thin organic interfacial layer effectively reduces reverse current by two orders of magnitude.
- Forward characteristics above 1 V remain largely unaffected.
- Achieved a rectification ratio of five orders of magnitude in printed organic diodes.
Outlook:
- Potential for printed organic diodes in applications requiring low reverse currents.
- Further optimization of interfacial layer engineering for enhanced performance.
- Integration of these diodes into flexible and printable electronic systems.

