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Published on: May 13, 2020
Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons
Jongwon Yoon1, Woong-Ki Hong, Minseok Jo
1School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
ACS Nano
|December 16, 2010
Summary
We developed zinc oxide (ZnO) nanowire field-effect transistors (FETs) exhibiting nonvolatile memory. Mobile protons, generated via high-pressure hydrogen annealing, enable reproducible switching and storage in these novel nanomaterial-based devices.
Area of Science:
- Nanomaterials Science
- Solid-State Electronics
- Device Physics
Background:
- Field-effect transistors (FETs) are fundamental electronic components.
- Nonvolatile memory requires stable charge storage.
- Zinc oxide (ZnO) nanowires offer unique electronic properties.
Purpose of the Study:
- To demonstrate nonvolatile memory functionality in ZnO nanowire FETs.
- To investigate the role of mobile protons in memory behavior.
- To explore a new route for incorporating proton-based storage elements.
Main Methods:
- Fabrication of ZnO nanowire field-effect transistors (FETs).
- High-pressure hydrogen annealing (HPHA) at 400 °C to generate mobile protons.
- Electrical characterization to assess memory properties (hysteresis, switching).
- Analysis of proton movement and its effect on interface properties.
Main Results:
- ZnO nanowire FETs exhibited reproducible hysteresis and reversible switching.
- Nonvolatile memory behavior was observed, distinct from conventional FETs.
- Memory characteristics were attributed to proton migration between Si/SiO(2) and SiO(2)/ZnO interfaces.
- Proton movement tuned interface properties like electric field and surface charge density.
Conclusions:
- Mobile protons generated by HPHA enable nonvolatile memory in ZnO nanowire FETs.
- The study provides a mechanism for proton-induced memory effects in nanomaterials.
- This research offers a pathway for integrating proton-based storage into CMOS platforms for FET memory devices.
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