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Related Experiment Video

Updated: Mar 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

Highly Stable Chip-Scale Tellurium Memtransistor Based on Field-Induced Oxygen Vacancy Migration.

Eunjeong Cho^1,2, Seyoung Oh^1,2, Ojun Kwon^1,2

¹Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.

ACS Applied Materials & Interfaces

|March 16, 2026

Summary

New Te memtransistors offer stable synaptic device functionality for neuromorphic systems. These devices demonstrate high yield and endurance, paving the way for advanced artificial intelligence hardware.

Keywords:

Te memtransistor chip-scale 8 × 8 array devices field-induced oxygen vacancy migration gate-tunable resistive switching heterosynaptic plasticity

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Published on: August 29, 2025

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Last Updated: Mar 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Area of Science:

Materials Science
Electrical Engineering
Neuroscience

Background:

Memtransistors are crucial for energy-efficient neuromorphic systems.
Previous memtransistors faced challenges in stability, yield, and durability.

Purpose of the Study:

To demonstrate stable chip-scale Te memtransistor switching.
To investigate the role of film thickness in controlling resistive behavior.
To emulate heterosynaptic plasticity for neuromorphic applications.

Main Methods:

Utilized radiofrequency (RF)-sputtered polycrystalline Te films of varying thickness.
Investigated Schottky barrier height modulation via oxygen vacancy migration in TeO_2-x.
Emulated synaptic plasticity using voltage stimuli to drain and gate terminals.

Main Results:

Achieved high yield (>96.9%) with 62 functional devices on an 8x8 array.
Demonstrated high linearity and low asymmetry over 10,000 potentiation/depression cycles.
Attained ~94.2% accuracy in handwritten digit recognition simulations.

Conclusions:

Developed highly stable Te memtransistors for neuromorphic circuits.
Thickness control of TeO_2-x is key for tunable resistive switching.
The demonstrated device performance supports large-scale integration and design diversity in neuromorphic systems.