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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Enhanced electrical performance of tellurium FETs via ultra-thin atomic-layer-deposited Al2O3interlayer for

Yeongeun Kwon1,2, Seyoung Oh1,2, Ojun Kwon1,2

  • 1Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea.

Nanotechnology
|May 22, 2026
PubMed

Keywords:
Al2O3 interlayersFermi-level pinningTe field effect transistorscontact resistance

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