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Impacts of cost functions on inverse lithography patterning
1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, China.
Optics Express
|December 18, 2010
Summary
Inverse lithography patterning offers superior fidelity in advanced CMOS processes. Optimizing cost functions with resist and aerial image components improves mask correction and contour accuracy.
Area of Science:
- Semiconductor Manufacturing
- Computational Lithography
- Materials Science
Background:
- Advanced Complementary Metal-Oxide-Semiconductor (CMOS) processes require high patterning fidelity.
- Conventional mask correction techniques have limitations in exploring the full solution space.
- Inverse lithography (IL) offers potential for improved patterning but relies on customized cost functions.
Purpose of the Study:
- To investigate the impact of various objective functions on inverse lithography patterning.
- To analyze the superposition of different cost functions for IL.
- To evaluate pattern fidelity and mask characteristics using a gradient descent approach.
Main Methods:
- Employed a generic gradient descent approach for inverse lithography patterning.
- Investigated commonly used objective functions: resist image and aerial image.
- Derived aerial image contrast and analyzed its contribution to cost functions.
Main Results:
- Evaluated pattern fidelity and mask characteristics for simple layouts (isolated and nested contacts).
- Demonstrated that a hybrid cost function yields good results.
- Showcased that a dominant resist-image component with a minor aerial-image or contrast component is effective.
Conclusions:
- Customized cost function design is critical for successful inverse lithography patterning.
- A combined resist and aerial image/contrast objective function achieves superior mask correction.
- This approach enhances contour targeting for advanced CMOS manufacturing.
