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Silicon waveguide based TE mode converter.

Jing Zhang1, Tsung-Yang Liow, Mingbin Yu

  • 1Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, Singapore 117685. zhangj@ime.a-star.edu.sg

Optics Express
|December 18, 2010
PubMed
Summary
This summary is machine-generated.

A novel silicon waveguide polarization mode converter efficiently converts TE modes between horizontal and vertical waveguides. This compact device, measuring just 5 μm, maintains polarization integrity with minimal insertion loss.

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Area of Science:

  • Photonics and Optical Engineering
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Polarization diversity circuits are crucial for optical communication systems.
  • Efficient mode conversion between different waveguide orientations is a key challenge in integrated photonics.
  • Silicon photonics offers a scalable platform for complex optical circuits.

Purpose of the Study:

  • To design and demonstrate a silicon waveguide-based TE mode converter.
  • To achieve mode conversion between horizontal and vertical waveguides within a two-layer structure.
  • To evaluate the performance of the polarization mode converter in terms of length, conversion efficiency, and insertion loss.

Main Methods:

  • Design of a silicon waveguide structure incorporating a TE mode converter.
  • Fabrication of the two-layer structure waveguide.
  • Experimental characterization of the polarization mode converter's performance, including insertion loss and polarization maintenance.

Main Results:

  • Demonstration of a compact polarization mode converter with a minimum length of 5 μm.
  • Successful TE mode conversion between horizontal and vertical waveguides.
  • Insertion loss at the transition region was measured to be less than 2 dB, indicating high efficiency.

Conclusions:

  • The designed silicon waveguide TE mode converter effectively achieves mode conversion while preserving polarization.
  • The compact size and low insertion loss make this device suitable for integration into polarization diversity circuits.
  • This work contributes to the advancement of silicon photonics for advanced optical communication applications.