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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Interaction between metal and graphene: dependence on the layer number of graphene

Jisook Lee1, Konstantin S Novoselov, Hyeon Suk Shin

  • 1Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Banyeon-ri 100, Ulsan 689-805, Korea.

ACS Nano
|December 23, 2010
PubMed

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