Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

The Hall Effect01:30

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Orbital magnetoresistance in the antiferromagnet CoO driven by dynamic orbital angular momentum.

Science (New York, N.Y.)·2026
Same author

Giant Orbital Rashba-Edelstein Effect in Crystalline Cu<sub>2</sub>O/Cu Heterostructures.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Quantum Impurity Sensing of Altermagnetic Order.

Physical review letters·2026
Same author

Surface Acoustic Wave Driven Acoustic Spin Splitter in d-Wave Altermagnetic Thin Films.

Physical review letters·2026
Same author

<math><mi>P</mi><mi>T</mi></math>-Symmetric Antiferromagnets as Building Blocks for Anomalous Transport.

Nano letters·2026
Same author

Cluster-based DFT modeling of Raman vibrations in tetrahedral GeS<sub>2</sub> and GeSe<sub>2</sub> amorphous chalcogenides.

Scientific reports·2026
Same journal

Erratum for the Research Article "Detecting supramolecular organic nanoparticles during heat wave".

Science (New York, N.Y.)·2026
Same journal

Local signals, systemic decline.

Science (New York, N.Y.)·2026
Same journal

The mechanics of liver regeneration.

Science (New York, N.Y.)·2026
Same journal

Computing in a memory with physics.

Science (New York, N.Y.)·2026
Same journal

Retraction.

Science (New York, N.Y.)·2026
Same journal

Making time.

Science (New York, N.Y.)·2026
See all related articles

Related Experiment Video

Updated: Jun 5, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Spin Hall effect transistor.

Jörg Wunderlich1, Byong-Guk Park, Andrew C Irvine

  • 1Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK. jw526@cam.ac.uk

Science (New York, N.Y.)
|January 6, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel semiconductor spin Hall effect transistor, merging two research areas. This device demonstrates a spin AND logic function without current in its active region, enabling new spintronic applications.

More Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

Related Experiment Videos

Last Updated: Jun 5, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

Area of Science:

  • Semiconductor spintronics
  • Quantum relativistic phenomena in solid-state systems

Background:

  • Spin transistors and spin Hall effects are distinct research areas in spintronics.
  • Integrating these phenomena can lead to advanced spintronic devices.

Purpose of the Study:

  • To combine spin transistors and spin Hall effects into a single device.
  • To demonstrate a functional logic gate using the spin Hall effect in a semiconductor.

Main Methods:

  • Fabrication of an all-semiconductor spin Hall effect transistor.
  • Utilizing diffusive transport and gate control for device operation.
  • Demonstrating a spin AND logic function within the semiconductor channel.

Main Results:

  • Successful realization of an all-semiconductor spin Hall effect transistor.
  • Operation without electrical current in the active transistor region.
  • Demonstration of a spin AND logic gate using two gates.

Conclusions:

  • The spin Hall effect is applicable in microelectronic device geometries.
  • The study provides electrical detection of spin transistors in gated semiconductor channels.
  • The device serves as a tool for exploring tunable spin Hall and spin precession phenomena.