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Electronic transport in dual-gated bilayer graphene at large displacement fields
Thiti Taychatanapat1, Pablo Jarillo-Herrero
1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Abstract:
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.
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