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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Related Experiment Video

Updated: Jun 5, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Graphene field-effect transistors with ferroelectric gating.

Yi Zheng1, Guang-Xin Ni, Chee-Tat Toh

  • 1Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542.

Physical Review Letters
|January 15, 2011
PubMed
Summary

Researchers demonstrate control over nonvolatile graphene field-effect transistors using background doping. This method enables symmetrical bit writing with significant resistance changes and highly reproducible switching cycles.

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Last Updated: Jun 5, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Ferroelectric gating introduces nonvolatility to graphene field-effect transistors (GFETs).
  • Understanding and controlling the nonlinear, hysteretic behavior of ferroelectric gating in GFETs remains a challenge.
  • Novel functionalities in GFETs are crucial for advanced electronic applications.

Purpose of the Study:

  • To quantitatively characterize hysteretic ferroelectric gating in GFETs.
  • To demonstrate a method for controlling ferroelectric gating using background doping.
  • To achieve symmetrical, nonvolatile bit writing in GFETs.

Main Methods:

  • Quantitative characterization of ferroelectric gating using independent background doping (n(BG)) from dielectric gating.
  • Unidirectional shifting of hysteretic ferroelectric doping in graphene via electrostatic control.
  • Demonstration of bit writing and switching in graphene-ferroelectric field-effect transistors (GFETs).

Main Results:

  • Ferroelectric gating in GFETs exhibits nonlinear and hysteretic characteristics.
  • Background doping (n(BG)) effectively controls ferroelectric gating by unidirectionally shifting hysteresis.
  • Demonstrated symmetrical bit writing with >500% resistance change.
  • Achieved reproducible nonvolatile switching over 10⁵ cycles.

Conclusions:

  • Background doping offers an effective electrostatic control mechanism for ferroelectric gating in GFETs.
  • This control enables symmetrical and high-performance nonvolatile memory operations in GFETs.
  • The findings pave the way for advanced nonvolatile memory devices based on graphene and ferroelectrics.