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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
Published on: January 4, 2016
A selective etching phenomenon on {001} faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid
Yun Wang1, Haimin Zhang, Yanhe Han
1Centre for Clean Environment and Energy, and Griffith School of Environment, Gold Coast Campus, Griffith University, QLD 4222, Australia.
Chemical Communications (Cambridge, England)
|January 18, 2011
Abstract:
A selective etching phenomenon on {001} faceted anatase TiO(2) single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown {001} facets at low concentrations, but selectively destroys the grown {001} facets at high concentrations.
