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Published on: February 26, 2019
Controlling spatial density and size of nanocrystals by two-step atomic layer deposition
Do-Joong Lee1, Sung-Soo Yim, Ki-Su Kim
1Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.
Nanotechnology
|January 29, 2011
Summary
This study introduces a two-step atomic layer deposition (ALD) method to precisely control the density and size of ruthenium nanocrystals (NCs) by adjusting nucleation rates.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Controlling nanocrystal (NC) size and density is crucial for advanced material properties.
- Atomic Layer Deposition (ALD) offers precise film growth but controlling NC nucleation density requires further development.
Purpose of the Study:
- To develop a two-step ALD process for independent control of ruthenium (Ru) nanocrystal spatial density and size.
- To modulate the nucleation rate during ALD to achieve desired NC characteristics.
Main Methods:
- Implemented a two-step ALD process using sequential high and low nucleation rate conditions.
- Varied pulsing time and carrier flow rate of the Ru precursor to control nucleation and growth rates.
- Utilized surface-saturated and reduced deposition conditions.
Main Results:
- Achieved tunable spatial density of Ru NCs ranging from 7.9 × 10^11 to 3.2 × 10^12 cm⁻².
- Controlled average Ru NC diameter between 1.9 and 3.3 nm.
- Demonstrated significant reduction in film growth and nucleation rates by optimizing precursor delivery.
Conclusions:
- The proposed two-step ALD method effectively controls both spatial density and size of Ru NCs.
- Modulating nucleation rates via precursor pulsing and carrier flow is key to tailoring NC properties.
- This technique provides a pathway for fabricating precisely engineered nanomaterials.

