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Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...

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Fabricating Nanogaps by Nanoskiving
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Spatial bandgap engineering along single alloy nanowires.

Fuxing Gu1, Zongyin Yang, Huakang Yu

  • 1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China.

Journal of the American Chemical Society
|January 29, 2011
PubMed
Summary
This summary is machine-generated.

Researchers engineered semiconductor nanowires with tunable bandgaps by controlling composition from cadmium sulfide (CdS) to cadmium selenide (CdSe). This spatial bandgap engineering enables gradual modulation of light emission for advanced optoelectronic applications.

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Bandgap engineering of semiconductor nanowires is crucial for developing advanced nanoscale optoelectronic devices.
  • Controlling the composition of alloy nanowires allows for tailored electronic and optical properties.

Purpose of the Study:

  • To demonstrate a facile method for spatial bandgap engineering in single cadmium sulfide (CdS) and cadmium selenide (CdSe) alloy nanowires.
  • To achieve continuous composition tuning along the nanowire length, resulting in a gradient of bandgaps and emission wavelengths.

Main Methods:

  • Utilized a facile thermal evaporation method to synthesize CdS(1-x)Se(x) alloy nanowires.
  • Achieved spatial control over the composition (x) along the nanowire, varying from x=0 (CdS) to x=1 (CdSe).

Main Results:

  • Successfully created single CdS(1-x)Se(x) alloy nanowires with continuously tuned composition along their length.
  • Demonstrated gradual modulation of the bandgap from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light).
  • Observed high-quality crystallization in the multicolor nanowires despite the composition gradient.

Conclusions:

  • The developed method enables precise spatial bandgap engineering in semiconductor nanowires.
  • These gradient bandgap nanowires hold significant potential for applications in multicolor displays, lighting, solar cells, detectors, and biotechnology.