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Towards gigahertz operation: ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide
Dongmo Im1, Hanul Moon, Minchul Shin
1Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
Abstract:
Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C60/WO3 diodes.
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