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Updated: Jun 4, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Tunable band gaps in bilayer graphene-BN heterostructures
Ashwin Ramasubramaniam1, Doron Naveh, Elias Towe
1Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States. ashwin@engin.umass.edu
Abstract:
We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.
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