Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Electrical Transport01:29

Electrical Transport

The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...
Drift Velocity01:19

Drift Velocity

The high speed of electrical signals results from the fact that the force between charges acts rapidly at a distance. Thus, when a free charge is forced into a wire, the incoming charge pushes other charges ahead due to the repulsive force between like charges. These moving charges move the charges farther down the line. The density of charge in a system cannot easily be increased, so the signal is passed on rapidly. The resulting electrical shock wave moves through the system at nearly the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

Nano letters·2018
Same author

Quenching of a room temperature fluorescence band at 693 nm during photoactivation of the water-splitting system of Photosystem II in flashed barley leaves.

Photosynthesis research·2014
Same author

Reversible optical doping of graphene.

Scientific reports·2013
Same author

Electron-induced limitation of surface plasmon propagation in silver nanowires.

Nanotechnology·2013
Same author

From patterned optical near-fields to high symmetry acoustic vibrations in gold crystalline platelets.

Physical chemistry chemical physics : PCCP·2012
Same author

Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics.

Nanotechnology·2011

Related Experiment Video

Updated: Jun 4, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

Electronic transport in conducting polymer nanowire array devices.

N T Kemp1, R Newbury, J W Cochrane

  • 1Department of Physics, The University of Hull, Kingston-upon-Hull HU6 7RX, UK. N.Kemp@hull.ac.uk

Nanotechnology
|February 4, 2011
PubMed
Summary

Novel polyaniline nanowire arrays exhibit temperature-dependent conductivity. Below 60 K, Coulomb blockade effects due to charging in conducting regions cause non-linear current-voltage behavior and a threshold voltage near 30 K.

More Related Videos

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Related Experiment Videos

Last Updated: Jun 4, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Polyaniline nanowires are promising materials for electronic devices.
  • Understanding their electrical transport properties at low temperatures is crucial for device applications.

Purpose of the Study:

  • To investigate the temperature-dependent conductivity and current-voltage (I-V) characteristics of novel polyaniline nanowire array devices.
  • To elucidate the underlying physical mechanisms responsible for the observed electrical behavior at low temperatures.

Main Methods:

  • Fabrication of polyaniline nanowire array devices.
  • Low-temperature conductivity measurements.
  • Current-voltage (I-V) characterization from 30 K to room temperature.

Main Results:

  • Observed temperature-dependent conductivity in polyaniline nanowire arrays.
  • Identified a transition to non-linear I-V behavior below 60 K.
  • Detected a threshold voltage onset at 30 K, indicating suppressed current flow below this potential.

Conclusions:

  • The low-temperature non-linear I-V behavior and threshold voltage are attributed to Coulomb blockade effects.
  • Charging of small conducting regions separated by tunnel junctions in the nanowire morphology explains the observed phenomena.
  • This study provides insights into the charge transport mechanisms in polyaniline nanowires, relevant for nanoscale electronic device design.