Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

Area of Science:

• Semiconductor physics
• Radiation detection
• X-ray spectroscopy

Background:

• Silicon drift detectors (SDDs) are semiconductor devices utilizing high resistivity silicon.
• They feature junctions on both sides of the wafer, creating a fully depleted region.
• Ionizing radiation generates electrons, which are guided to a small capacitance anode by an electric field.

Purpose of the Study:

• To describe the structure and performance of SDDs optimized for high-resolution soft X-ray spectroscopy.
• To evaluate SDDs designed for high detection rates and near room temperature operation.
• To report experimental results from SDDs in spectroscopy applications.

Main Methods:

• Direct integration of a front-end JFET onto the detector chip near the anode.
• Minimizing stray capacitances through integrated design for optimal capacitive matching.
• Utilizing a suitable electric field to guide charge carriers to the collecting anode.

Main Results:

• Achieved high energy resolution at high count rates and near room temperature.
• Demonstrated effective charge collection independent of detector active area.
• Experimental validation of SDD performance in soft X-ray spectroscopy.

Conclusions:

• The integrated JFET design in SDDs is crucial for high performance.
• These SDDs are suitable for demanding spectroscopy applications with soft X-rays.
• The technology enables advanced X-ray detection with improved resolution and count rate capabilities.