Related Experiment Video
Updated: Jun 4, 2026
14:16
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Microscopic origins of electron and hole stability in ZnO
C Richard A Catlow1, Alexey A Sokol, Aron Walsh
1University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, UK. c.r.a.catlow@ucl.ac.uk
Chemical Communications (Cambridge, England)
|February 18, 2011
Abstract:
We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.
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