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MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

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Updated: May 2, 2026

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

Published on: July 12, 2016

Small field electron beam dosimetry using MOSFET detector.

Md Nurul Amin¹, Robert Heaton, Bern Norrlinger

¹Department of Radiation Physics, Princess Margaret Hospital, University Health Network, Toronto, Ontario, Canada. Nurul.Amin@rmp.uhn.on.ca

Journal of Applied Clinical Medical Physics

|February 19, 2011

Summary

This summary is machine-generated.

Metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters show promise for small field electron beam dosimetry. They offer reproducible and linear dose responses, aligning well with traditional methods like ion chambers and films.

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Area of Science:

Medical Physics
Radiation Oncology
Dosimetry

Background:

Accurate dosimetry for small electron fields is critical in radiotherapy but presents challenges.
Traditional methods like ion chambers and films have limitations, especially in filmless departments.
Exploring alternative dosimeters like MOSFETs is essential for modern clinical practice.

Purpose of the Study:

To evaluate the performance of a high-sensitivity microMOSFET as a relative dosimeter for small field electron beams.
To assess MOSFET's reproducibility, linearity, and sensitivity in clinical electron beams.
To compare MOSFET measurements with ion chamber and film dosimetry for various field sizes and energies.

Main Methods:

Investigated reproducibility, linearity, and sensitivity of microMOSFET in clinical electron beams.
Measured percent depth doses, output factors, and profiles in water and solid water phantoms using MOSFET.
Compared MOSFET measurements against ion chamber and film dosimetry for field sizes from 1 cm to 10x10 cm for 6-20 MeV beams.

Main Results:

MOSFET sensitivity remained constant across investigated field sizes.
Dose response was linear and reproducible (within ±1% for 100 cGy).
Excellent agreement observed between MOSFET, film, and ion chamber for central axis depth dose curves; output factors agreed within 3% for small fields.

Conclusions:

MicroMOSFETs demonstrate reliable performance as relative dosimeters in small field electron beam dosimetry.
MOSFETs offer a viable alternative to conventional dosimetry methods in modern, filmless radiotherapy settings.
The study supports the clinical utility of MOSFETs for accurate small field electron beam measurements.