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Published on: July 24, 2015
Electronic transport in graphitic nanoribbon films
Ashkan Behnam1, Jason L Johnson, Yanbin An
1Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA. abehnam@ufl.edu
ACS Nano
|February 24, 2011
Summary
Multilayer graphene nanoribbon films show insulating behavior at low temperatures due to disorder. Their transport properties were analyzed using variable range hopping theory, revealing large localization lengths for improved electronic and photonic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene nanoribbons are promising materials for electronic applications.
- Understanding transport properties in disordered nanostructure films is crucial for device performance.
Purpose of the Study:
- To fabricate and characterize multilayer graphene nanoribbon films.
- To investigate the low-temperature transport behavior and localization effects.
- To explore the potential for electronic and photonic device applications.
Main Methods:
- Fabrication and patterning of multilayer graphene nanoribbon films.
- Temperature, electric, and magnetic field-dependent resistivity measurements.
- Analysis within the variable range hopping theory framework.
Main Results:
- Films exhibit conductive behavior at room temperature and insulating behavior below 20 K.
- Resistivity dependence on magnetic fields confirms insulating behavior, fitting interference scattering and wave function shrinkage models.
- Large localization lengths (45-90 nm) were extracted, indicating good inter-nanoribbon contact or high conductance.
Conclusions:
- Disordered multilayer graphene nanoribbon films display strong localization effects at low temperatures.
- The extracted localization lengths suggest potential for high-performance electronic and photonic devices.
- Further improvements can be guided by understanding these fundamental transport properties.
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