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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

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Published on: September 14, 2018

Three-beam interference lithography methodology.

J L Stay¹, G M Burrow, T K Gaylord

¹School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.

The Review of Scientific Instruments

|March 3, 2011

Summary

This summary is machine-generated.

A new method optimizes three-beam interference lithography for creating 2D periodic structures. This technique enables precise fabrication of photonic crystals and metamaterials for advanced electronic and optical applications.

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Area of Science:

Nanotechnology and Materials Science
Optics and Photonics

Background:

Three-beam interference lithography (IBL) is crucial for fabricating 2D periodic structures.
Applications include micro/nanoelectronics, photonic crystals, metamaterials, and optical elements.

Purpose of the Study:

To present a systematic methodology for optimized three-beam interference lithography.
To quantify design and alignment parameters for hexagonal and square lattices.

Main Methods:

Quantified design and alignment parameters for hexagonal and square lattices.
Controlled recording wavevector configuration, beam amplitudes, and polarizations.
Utilized positive- and negative-type photoresists for fabrication.

Main Results:

Demonstrated a systematic methodology for implementing optimized three-beam IBL.
Quantified feasible lattice constants for hexagonal and square patterns.
Fabricated example photonic crystal rodlike and holelike structures.

Conclusions:

The presented methodology enables precise control over 2D periodic structure fabrication using three-beam IBL.
Optimized parameters facilitate the creation of diverse nanostructures for advanced applications.