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Updated: Jun 4, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Three-beam interference lithography methodology
J L Stay1, G M Burrow, T K Gaylord
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA.
Abstract:
Three-beam interference lithography represents a technology capable of producing two-dimensional periodic structures for applications such as micro- and nanoelectronics, photonic crystal devices, metamaterial devices, biomedical structures, and subwavelength optical elements. In the present work, a systematic methodology for implementing optimized three-beam interference lithography is presented. To demonstrate this methodology, specific design and alignment parameters, along with the range of experimentally feasible lattice constants, are quantified for both hexagonal and square periodic lattice patterns. Using this information, example photonic crystal rodlike structures and holelike structures are fabricated by appropriately controlling the recording wavevector configuration along with the individual beam amplitudes and polarizations, and by changing between positive- or negative-type photoresists.

