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Updated: Jun 4, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Identification of active atomic defects in a monolayered tungsten disulphide nanoribbon
Zheng Liu1, Kazu Suenaga, Zhiyong Wang
1Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan. liu-z@aist.go.jp
Abstract:
Edge structures and atomic defects can significantly affect the physical and chemical properties of low-dimensional materials, such as nanoribbons, and therefore merit a thorough investigation at the atomic scale. Here, we successfully discriminate single atoms on a monolayered tungsten disulphide nanoribbon by means of time-resolved annular dark-field imaging and spatially resolved electron energy-loss spectroscopy. We unambiguously identify and successfully visualize in motion atomic defects, such as vacancies and edge atoms, using scanning transmission electron microscopy. We also report a direct observation of slip deformation in the nanoribbons and present evidence demonstrating that the deformation process involves the migration of vacancies and rearrangement of tungsten atoms. Single-atom defects are successfully observed for the first time during plastic deformation.
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