Related Experiment Video

Updated: Jun 4, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)
10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

Published on: June 16, 2016

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

Han-Youl Ryu1, Jong-In Shim

  • 1Department of Physics, Inha University, 253 Yonghyeon-dong, Incheon 402-751, South Korea.

Optics Express
|March 4, 2011
PubMed

More Related Videos

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Small-signal Diode Model01:18

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Impedance Combination01:21

Impedance Combination

Consider a string of christmas lights, each bulb symbolizing an impedance element. In this series configuration, the flow of electric current remains uniform across every component. This behavior aligns with Kirchhoff's Voltage Law (KVL), which asserts that the total impedance in such a setup equals the sum of individual impedances—akin to resistors in series. It follows that the voltage from the power source is distributed proportionally among these components, adhering to the voltage division...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...