Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 × 1 interface from Si KLV Auger
1Surface Science Research Centre and Department of Physics, University of Liverpool, Liverpool L69 3BX, UK.
Abstract:
An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 × 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.
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