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Updated: Jan 18, 2026

Determining the Mechanical Strength of Ultra-Fine-Grained Metals
Published on: November 22, 2021
Atomistic study of misfit dislocation in metal/SiC(111) interfaces
1Department of Physics, Tsinghua University, Beijing, People's Republic of China. wangyd05@mails.tsinghua.edu.cn
Abstract:
The interatomic potentials across metal/SiC(111) interfaces are derived from ab initio adhesive energies by an inversion method. We use these potentials to investigate the structures, energies and Burgers vectors of misfit dislocations in metal/SiC(111) interfaces. Two kinds of interfacial dislocations are found in M/SiC(111) (M = Au, Ag, Al, Pt) interfaces, where the M/SiC(111) (M = Au, Al) system has partial dislocations and the M/SiC(111) (M = Ag, Pt) system has perfect dislocations. The former has a coherent interface while the latter corresponds to a semi-coherent interface.
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