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Published on: October 5, 2013
Magnetic properties and electronic structures of intermediate valence systems CeRhSi2 and Ce2Rh3Si5
D Kaczorowski1, A P Pikul, U Burkhardt
1Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO Box 1410, 50-950 Wrocław, Poland. D.Kaczorowski@int.pan.wroc.pl
Abstract:
The crystal structures and the physical (magnetic, electrical transport and thermodynamic) properties of the ternary compounds CeRhSi(2) and Ce(2)Rh(3)Si(5) (orthorhombic CeNiSi(2)- and U(2)Co(3)Si(5)-type structures, respectively) were studied over wide ranges of temperature and magnetic field strength. The results revealed that both materials are valence fluctuating systems, in line with previous literature reports. Direct evidence for valence fluctuations was obtained by means of Ce L(III)-edge x-ray absorption spectroscopy and Ce 3d core-level x-ray photoelectron spectroscopy. The experimental data were confronted with the results of ab initio calculations of the electronic band structures in both compounds.
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