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Anderson transition in disordered bilayer graphene
M H Zare1, Mohsen Amini, Farhad Shahbazi
1Department of Physics, Isfahan University of Technology, Isfahan, Iran.
Summary
This study on graphene bilayers with disorder reveals an Anderson metal-insulator transition. The kernel polynomial method (KPM) was used to analyze electronic properties and distinguish localized from extended states.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Graphene bilayers with Bernal stacking exhibit unique electronic properties.
- Disorder in materials can significantly alter their electronic behavior, potentially leading to metal-insulator transitions.
- Understanding these transitions is crucial for designing novel electronic devices.
Purpose of the Study:
- To investigate the electronic properties of Bernal-stacked graphene bilayers under diagonal disorder.
- To determine the critical disorder strength at which a metal-insulator transition occurs.
- To employ the kernel polynomial method (KPM) for efficient calculation of electronic states.
Main Methods:
- Utilizing the kernel polynomial method (KPM) for calculating the local density of states (LDOS).
- Applying the tight-binding approximation with nearest-neighbor interactions.
- Geometrically averaging LDOS across different lattice sites to identify localized and extended states.
Main Results:
- The study successfully calculated the LDOS without full Hamiltonian diagonalization.
- A clear criterion for distinguishing localized from extended states based on LDOS averaging was established.
- The graphene bilayer model demonstrated an Anderson metal-insulator transition at a specific disorder strength.
Conclusions:
- The kernel polynomial method is an efficient tool for studying disordered electronic systems.
- Bernal-stacked graphene bilayers exhibit a disorder-driven Anderson metal-insulator transition.
- The findings contribute to the understanding of electron localization in low-dimensional materials.
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