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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and

S Rumyantsev1, G Liu, W Stillman

  • 1Center for Integrated Electronics, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 16, 2011
PubMed

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