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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Published on: April 8, 2018

Multiferroic thin-film integration onto semiconductor devices.

Reji Thomas1, J F Scott, Dwarka N Bose

  • 1Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931, USA. etreji@yahoo.com

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 16, 2011
PubMed
Summary
This summary is machine-generated.

This review explores single-phase thin films with ferroelectric and magnetic properties integrated with semiconductors. The focus is on room-temperature electrical control of magnetism and magnetic control of ferroelectricity for advanced device applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid State Chemistry

Background:

  • Ferroelectric and ferromagnetic properties in single-phase thin films are crucial for advanced electronic devices.
  • The integration of these multiferroic materials with semiconductors enables novel functionalities.
  • Historical context highlights the evolution of understanding electro-magnetic coupling, from Gilbert to Maxwell.

Purpose of the Study:

  • To review thin films exhibiting both ferroelectricity and (anti)ferromagnetism on semiconductor substrates.
  • To discuss the driving forces behind current research: electrical control of magnetism and magnetic control of ferroelectricity at room temperature.
  • To provide an overview of multiferroic material classification and their device applications with semiconductor integration.

Main Methods:

  • Literature review of single-phase multiferroic thin films.
  • Survey of key historical contributions from physicists like Curie, Dzyaloshinskii, Astrov, and Schmid.
  • Classification of multiferroic materials, particularly oxide multiferroics, based on Khomskii's framework.

Main Results:

  • Thin films with dual ferroic properties (ferroelectricity and (anti)ferromagnetism) are successfully deposited on semiconductors.
  • Room-temperature electrical control of magnetism and magnetic control of ferroelectricity are demonstrated.
  • Various multiferroic materials are classified, aiding in understanding their properties and potential.

Conclusions:

  • The integration of multiferroic thin films with semiconductors offers significant potential for next-generation electronic devices.
  • Continued research into electrical and magnetic control at room temperature is vital for device functionality.
  • Classification and understanding of multiferroic materials are essential for targeted application development.