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Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated

M A Leontiadou¹, K L Litvinenko, A M Gilbertson

¹Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|March 17, 2011

Summary

Researchers measured spin dynamics in indium antimonide quantum wells at room temperature without magnetic fields. They extracted zero-field spin splitting, finding a Rashba parameter of 0.09 ± 0.1 eV Å for asymmetric wells, crucial for spintronics.

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Area of Science:

Condensed Matter Physics
Materials Science
Quantum Mechanics

Background:

Understanding spin dynamics in semiconductor quantum wells is crucial for developing spintronic devices.
Degenerately doped n-InSb quantum wells (QWs) offer unique properties for exploring spin-related phenomena.

Purpose of the Study:

To optically measure spin dynamics at elevated temperatures and zero magnetic field in asymmetric and symmetric n-InSb QWs.
To directly extract zero-field spin splitting using experimental parameters like spin lifetime, carrier concentration, and electron mobility.

Main Methods:

Optical measurement of spin dynamics.
Utilizing spin lifetime (τ(s)), sheet carrier concentration (n), and electron mobility (μ) to determine zero-field spin splitting.
Characterization of asymmetric and symmetric n-InSb quantum wells.

Main Results:

Successfully extracted zero-field spin splitting for both asymmetric and symmetric n-InSb QWs.
Deduced a room temperature Rashba parameter (α) of 0.09 ± 0.1 eV Å for the asymmetric sample, consistent with theoretical calculations.
Estimated the Rashba coefficient α(0) as a figure of merit for electric field modulation of electron spins.

Conclusions:

The study provides a direct method for determining zero-field spin splitting in quantum wells.
Findings offer valuable insights into Rashba interaction effects at room temperature.
Results have significant implications for the design and optimization of spintronic devices.